全文获取类型
收费全文 | 1270篇 |
免费 | 445篇 |
国内免费 | 160篇 |
专业分类
化学 | 975篇 |
晶体学 | 52篇 |
力学 | 1篇 |
综合类 | 5篇 |
物理学 | 842篇 |
出版年
2024年 | 1篇 |
2023年 | 9篇 |
2022年 | 42篇 |
2021年 | 66篇 |
2020年 | 68篇 |
2019年 | 67篇 |
2018年 | 49篇 |
2017年 | 63篇 |
2016年 | 100篇 |
2015年 | 91篇 |
2014年 | 117篇 |
2013年 | 130篇 |
2012年 | 129篇 |
2011年 | 102篇 |
2010年 | 122篇 |
2009年 | 109篇 |
2008年 | 119篇 |
2007年 | 122篇 |
2006年 | 81篇 |
2005年 | 55篇 |
2004年 | 62篇 |
2003年 | 49篇 |
2002年 | 23篇 |
2001年 | 26篇 |
2000年 | 9篇 |
1999年 | 11篇 |
1998年 | 11篇 |
1997年 | 8篇 |
1996年 | 6篇 |
1995年 | 2篇 |
1994年 | 4篇 |
1993年 | 3篇 |
1992年 | 1篇 |
1991年 | 2篇 |
1990年 | 3篇 |
1989年 | 2篇 |
1988年 | 1篇 |
1986年 | 3篇 |
1983年 | 1篇 |
1982年 | 1篇 |
1981年 | 2篇 |
1980年 | 2篇 |
1973年 | 1篇 |
排序方式: 共有1875条查询结果,搜索用时 93 毫秒
81.
采用高温固相法成功制备了Na3Sc2-x-y(PO4)3∶xTm3+,yDy3+荧光粉,利用X射线衍射仪、扫描电子显微镜和荧光光谱仪对荧光粉进行了物相、形貌和发光性能进行了表征。 在Na3Sc2(PO4)3∶0.06Tm3+,yDy3+荧光粉中,物质的量分数6%的Tm3+和6%的Dy3+在360 nm激发下呈现出白光发射,其发射光谱在460~685 nm范围内存在Tm3+位于457 nm的特征发射峰,对应于Tm3+的3H6→1D2跃迁,以及Dy3+位于483、577和672 nm处的3个特征发射峰,分别对应于Dy3+的4F9/2→6H15/2、4F9/2→6H13/2和4F9/2→6H11/2的跃迁。 观测到Na3Sc2(PO4)3∶Tm3+荧光粉的发射光谱与Na3Sc2(PO4)3∶Dy3+的激发光谱有较好的重叠,且Tm3+的荧光寿命随Dy3+浓度的增加逐渐降低,因此在Na3Sc2(PO4)3∶Tm3+,Dy3+荧光粉中存在Tm3+向Dy3+的能量传递。 利用Dexter和Reisfeld近似分析了能量转移机制,发现从Tm3+到Dy3+的能量传递临界距离为1.6 nm,能量传递过程是通过偶极-偶极相互作用进行的。 Na3Sc2(PO4)3∶0.06Tm3+,0.06Dy3+荧光粉具有较好的耐受热猝灭性能,在423、473和523 K时的发射强度分别为298 K时发射强度的97.6%、89.2%和78.6%。 随着Dy3+浓度的增加,Na3Sc2(PO4)3∶0.06Tm3+,yDy3+荧光粉的发光颜色由蓝色转变为白色,再由白色变黄色。 Na3Sc2(PO4)3∶Tm3+,Dy3+荧光粉作为一种可调色或单相白光荧光粉在发光二极管上具有潜在的应用前景。 相似文献
82.
通过高温固相反应合成了一系列宽谱带发射黄色荧光粉Sr_8MgAl(PO_4)_7∶x Eu~(2+)(SMAP∶x Eu~(2+)),并对其物质结构、发光性能及其在白色发光二极管(WLED)领域的应用进行了探究。X射线衍射(XRD)测试结果表明,SMAP∶x Eu~(2+)系列荧光粉具有单斜结构和C2/m空间群,激活剂Eu~(2+)离子能够很好地进入SMAP基质中并占据Sr~(2+)离子的晶格位点。漫反射光谱分析显示SMAP基质属于宽带隙材料,带隙宽度为3.60 e V。此外,SMAP∶x Eu~(2+)具有较宽的激发范围(280~500 nm),对应于Eu~(2+)离子的4f~7→4f~65d~1跃迁;在380 nm近紫外光激发下,呈现出450~800 nm的多发光中心的非对称黄光发射,发射峰位于590 nm处。基于高斯多峰拟合结果,得到3个发光中心,分别位于528、600和680 nm。最后,将已制备的黄色荧光粉SMAP∶0.05Eu~(2+)与商业化蓝粉Ba Mg Al_(10)O_(17)∶Eu~(2+)混合涂覆到400 nm芯片上制得色温较好(3 344 K)、显色指数较高(90.1)的WLED。 相似文献
83.
Three new emitters,namely 10,10'-(quinoline-2,8-diyl)bis(10 H-phenoxazine)(Fene),10,10'-(quinoline-2,8-diyl)bis(10 H-phenothiazine)(Fens) and 10,10'-(quinoline-2,8-diyl)bis(9,9-dimethyl-9,10-dihydroacridine)(Yad),featuring quinoline as a new electron acceptor have been designed and conveniently synthesized.These emitters possessed small singlet-triplet splitting energy(ΔEst) and twisted structures,which not only endowed them show thermally activated delayed fluorescence(TADF)properties but also afforded a remarkable aggregation-induced emission(AIE) feature.Moreover,they also showed aggregation-induced delayed fluorescence(AIDF) property and good photoluminescence(PL) property,which are the ideal emitters for non-doped organic light-emitting diodes(OLEDs).Furthermore,high-performance non-doped OLEDs based on Fene,Fens and Yad were achieved,and excelle nt maximum external quantum efficiencies(EQE_(max)) of 14,9%,13.1% and 17,4%,respectively,were obtained.It was also found that all devices exhibited relatively low turn-on voltages ranging from 3.0 V to3.2 V probably due to their twisted conformation and the AIDF properties.These results demonstrated the quinoline-based emitters could have a promising application in non-doped OLEDs. 相似文献
84.
Electroluminescence enhancement in ultraviolet organic light‐emitting diode with graded hole‐injection and ‐transporting structure 下载免费PDF全文
Xiaowen Zhang Bingjie Mo Fengjiao You Xiujuan Zhou Liming Liu Honghang Wang Bin Wei 《固体物理学:研究快报》2015,9(6):353-357
Electroluminescent intensity and external quantum efficiency (EQE) in ultraviolet organic light‐emitting diodes (UV OLEDs) have been remarkably enhanced by using a graded hole‐injection and ‐transporting (HIT) structure of MoO3/N,N ′‐bis(naphthalen‐1‐yl)‐N,N ′‐bis(phenyl)‐benzidine/MoO3/4,4′‐bis(carbazol‐9‐yl)biphenyl (CBP). The graded‐HIT based UV OLED shows superior short‐wavelength emis‐ sion with spectral peak of ~410 nm, maximum electroluminescent intensity of 2.2 mW/cm2 at 215 mA/cm2 and an EQE of 0.72% at 5.5 mA/cm2. Impedance spectroscopy is employed to clarify the enhanced hole‐injection and ‐transporting capacity of the graded‐HIT structure. Our results provide a simple and effective approach for constructing efficient UV OLEDs. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
85.
《Current Applied Physics》2015,15(3):248-252
Red phosphors Ca9Bi1-x(PO4)7:xEu3+ (x = 0.06, 0.10, 0.20, 0.30, 0.40, 0.50, 0.60, 0.70, 0.80 and 1.00) were synthesized by a conventional solid-state reaction (SSR) route. The X-ray diffraction patterns, photoluminescence spectra, ultraviolet–visible reflection spectroscopy, decay time and the International Commission on Illumination (CIE) chromaticity coordinates of these compounds were characterized and analyzed. The Eu-doped Ca9Bi(PO4)7 phosphors exhibited strong red luminescence which peaks located at 615 nm due to the 5D0→7F2 electric dipole transition of Eu3+ ions after excitation at 393 nm. Ultraviolet–visible spectra indicated that the band-gap of Ca9Bi0.30(PO4)7:0.70Eu3+ is larger than that of Ca9Bi(PO4)7. The results indicate that the phosphor Ca9Bi0.30(PO4)7:0.70Eu3+ can be a suitable red-emitting phosphor candidate for LEDs. 相似文献
86.
Chikyu Lee Eun Ju Park Miseon Won Yeong-Soon Gal Jun Liu Liming Dai 《Molecular Crystals and Liquid Crystals》2015,621(1):8-16
Electroluminescent (EL) properties of Ir(III) complex, [(2,4-diphenylquinoli-ne)]2Iridium picolinic acid N-oxide [(DPQ)2Ir(pic-N-O)] were investigated using PEDOT:PSS and reduced graphene oxide (rGO) as a hole transport layer for solution processable phosphorescent organic light-emitting diodes (PhOLEDs). High performance solution-processable PhOLED with PEDOT:PSS and (DPQ)2Ir(pic-N-O) (8 wt%) doped CBP:TPD:PBD (8:56:12) host emission layer were fabricated to give a high luminance efficiency (LE) of 26.9 cd/A, equivelent to an external quantum efficiency (EQE) of 14.2%. The corresponding PhOLED with rGO as a hole transport layer exhibited the maximum brightness and LE of 13540 cd/m2 and 16.8 cd/A, respectively. The utilization of the solution processable rGO thin films as the hole transport layer offered the great potential to the fabrication of solution processable PhOLEDs. 相似文献
87.
Luminous Butterflies: Efficient Exciton Harvesting by Benzophenone Derivatives for Full‐Color Delayed Fluorescence OLEDs 下载免费PDF全文
Sae Youn Lee Prof. Dr. Takuma Yasuda Dr. Yu Seok Yang Dr. Qisheng Zhang Prof. Dr. Chihaya Adachi 《Angewandte Chemie (International ed. in English)》2014,53(25):6402-6406
Butterfly‐shaped luminescent benzophenone derivatives with small energy gaps between their singlet and triplet excited states are used to achieve efficient full‐color delayed fluorescence. Organic light‐emitting diodes (OLEDs) with these benzophenone derivatives doped in the emissive layer can generate electroluminescence ranging from blue to orange–red and white, with maximum external quantum efficiencies of up to 14.3 %. Triplet excitons are efficiently harvested through delayed fluorescence channels. 相似文献
88.
Dr. Elena Madrid Yuanyang Rong Dr. Mariolino Carta Prof. Neil B. McKeown Richard Malpass‐Evans Prof. Gary A. Attard Tomos J. Clarke Prof. Stuart H. Taylor Prof. Yi‐Tao Long Prof. Frank Marken 《Angewandte Chemie (International ed. in English)》2014,53(40):10751-10754
A highly rigid amine‐based polymer of intrinsic microporosity (PIM), prepared by a polymerization reaction involving the formation of Tröger’s base, is demonstrated to act as an ionic diode with electrolyte‐dependent bistable switchable states. 相似文献
89.
以二(二苯基磷酰)胺(Htpip)作为辅助配体,与主配体2-(2,4-二氟苯基)异喹啉和2-(4-三氟甲基苯基)异喹啉合成了红光铱磷光配合物Ir(dfpiq)2tpip和Ir(tfmpiq)2tpip并得到了晶体结构。在CH2Cl2中发射光谱主要是MLCT发射,峰位置分别为622和600 nm,量子效率分别为15%和17%,而HOMO/LUMO能级分别是-4.80/-2.58和-4.73/-2.57 eV。在1150~1300(V·cm-1)1/2电场范围,Ir(dfpiq)2tpip的电子迁移率为6.61~8.49×10-6cm2·V-1·s-1,Ir(tfmpiq)2tpip的电子迁移率为6.08~6.61×10-6cm2·V-1·s-1。ITO/TAPC(60 nm)/Ir-complex(15wt%):CBP(50 nm)/TPBi(60 nm)/LiF(1 nm)/Al(100 nm)中基于Ir(dfpiq)2tpip的器件最大安培效率和功率效率分别为4.71 cd·A-1和1.82 lm·W-1,12.0 V时达到的最大亮度为18 195 cd·m-2。基于Ir(tfmpiq)2tpip的器件最大安培效率和功率效率分别为3.47 cd·A-1和1.51 lm·W-1,12.4 V时达到的最大亮度为14 676 cd·m-2。 相似文献
90.